Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor
نویسندگان
چکیده
In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.
منابع مشابه
A Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor
Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...
متن کاملGraphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures
This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product co...
متن کاملComputational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)
By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...
متن کاملPerformance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness
Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness" (2009). Birck and NCN Publications. Paper 392.
متن کاملEffect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal-oxide-semiconductor field-effect transistors MOSFETs are reported. The addition of edge disorder significantly reduces ON-state currents and increases OFF-state currents, and introduces wide variability across devices. These effects decrease as ribbon widths increase and as edge...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016